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|Title:||Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode||Authors:||Iwan, S.
Zhao, J. L.
Ryu, H. H.
Tan, Swee Tiam
Fan, Hai Ming
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2012||Source:||Iwan, S., Bambang, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, L., et al. (2012). Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode. Physica B : condensed matter, 407(14), 2721-2724.||Series/Report no.:||Physica B : condensed matter||Abstract:||Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films.||URI:||https://hdl.handle.net/10356/105298
|ISSN:||0921-4526||DOI:||10.1016/j.physb.2012.03.072||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||MAE Journal Articles|
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