Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105298
Title: Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode
Authors: Iwan, S.
Bambang, S.
Zhao, J. L.
Sun, L.
Zhang, S.
Ryu, H. H.
Tan, Swee Tiam
Fan, Hai Ming
Sun, Xiaowei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2012
Source: Iwan, S., Bambang, S., Zhao, J. L., Tan, S. T., Fan, H. M., Sun, L., et al. (2012). Green electroluminescence from an n-ZnO : Er/p-Si heterostructured light-emitting diode. Physica B : condensed matter, 407(14), 2721-2724.
Series/Report no.: Physica B : condensed matter
Abstract: Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films.
URI: https://hdl.handle.net/10356/105298
http://hdl.handle.net/10220/17751
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.03.072
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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