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|Title:||A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches||Authors:||Kim, Tony Tae-Hyoung
Yeoh, Yuan Lin
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Yeoh, Y. L., Wang, B., Yu, X., & Kim, T. T. (2013). A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 3030 - 3033.||Abstract:||This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense small RBL swing. The ultra-fine grain power gating switches are implemented to minimize the redundant leakage caused by the storage of garbage data. The leakage suppression of 52% is achieved after the initial power-up. A 16 kb SRAM test chip was fabricated in a 65nm CMOS technology and showed the minimum energy of 2.01 pJ at 0.4 V.||URI:||https://hdl.handle.net/10356/105330
|DOI:||10.1109/ISCAS.2013.6572517||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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