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Title: Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell
Authors: Masudy-Panah, Saeid
Dalapati, Goutam Kumar
Radhakrishnan, K.
Kumar, Avishek
Tan, Hui Ru
Keywords: DRNTU::Science::Physics::Electricity and magnetism
Issue Date: 2014
Source: Masudy-Panah, S., Dalapati, G. K., Radhakrishnan, K., Kumar, A., & Tan, H. R. (2014). Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell. Journal of applied physics, 116(7), 074501-.
Series/Report no.: Journal of applied physics
Abstract: Copper-rich interfacial-layer (Cu-rich IL) is formed during sputter deposition of cupric oxide (CuO) layer on silicon (Si). It has significant impact on the performance of p-CuO/n-Si heterojunction solar cells. In this report, CuO films deposited on Si at different RF-power levels using single and two-step RF-sputtering techniques and p-CuO/n-Si heterojunction solar cells have been investigated. Systematic characterization using XPS, AFM, XRD, Raman, and HR-TEM reveal that two-step RF-sputtering technique offers better crystal quality CuO film with thinner Cu-rich IL layer. Photovoltaic (PV) properties with an open-circuit voltage (Voc ) of 421 mV, short circuit current (Jsc ) of 4.5 mA/cm2, and a photocurrent of 8.3 mA/cm2 have been achieved for the cells prepared using two-step sputtering method, which are significantly higher than that for the solar cells fabricated using a single-step sputtering. The PV properties were further improved by depositing CuO films at higher working pressure with nitrogen doping. The efficiency of the best device achieved is approximately 1.21%, which is the highest value reported for p-CuO/n-Si heterojunction based solar cells.
DOI: 10.1063/1.4893321
Rights: © 2014 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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