Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105385
Title: History dependent magnetoresistance in lightly doped La2−xSrxCuO4 thin films
Authors: Shi, Xiaoyan
Popović, Dragana
Panagopoulos, Christos
Logvenov, G.
Bollinger, A. T.
Božović, I.
Issue Date: 2012
Source: Shi, X., Popović, D., Panagopoulos, C., Logvenov, G., Bollinger, A.T., & Božović, I. (2012). History dependent magnetoresistance in lightly doped La2−xSrxCuO4 thin films. Physica B: Condensed Matter, 407(11), 1915-1918.
Series/Report no.: Physica B : condensed matter
Abstract: The in-plane magnetoresistance (MR) in atomically smooth La2−xSrxCuO4 thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at . The positive MR exhibits glassy features, including history dependence and memory, for all orientations of B. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state.
URI: https://hdl.handle.net/10356/105385
http://hdl.handle.net/10220/17553
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.01.063
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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