Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105386
Title: A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
Authors: Yuan, Chao
Lam, Yvonne Ying Hung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Yuan, C., & Lam, Y. Y. H. (2013). A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications. 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 622-625.
metadata.dc.contributor.conference: IEEE International Symposium on Circuits and Systems (2013 : Beijing, China)
Abstract: This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching energy and total capacitance are reduced by 97% and 75%, respectively. Asynchronous design is implemented to eliminate the conventional system clock which is N-time of sampling rate. Furthermore, a delay-based internal clock generator produces a high-speed signal which allows True Single Phase Clock (TSPC) D Flip-flop (DFF) to be used in the low-speed biomedical applications. The ADC can work between 0 to 1 MS/s. The prototype ADC fabricated in UMC 65 nm 1P6M CMOS achieves best performance at 25 kS/s with 50.1 dB SNDR and 55.3 dB SFDR. Operating at 1 V supply and 25 kS/s, the ADC consumes 281 nW and exhibits a FOM of 43.3 fJ/conversion-step. The chip die area is 145 μm × 120 μm.
URI: https://hdl.handle.net/10356/105386
http://hdl.handle.net/10220/16582
DOI: 10.1109/ISCAS.2013.6571919
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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