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|Title:||Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks||Authors:||Zargaleh, Soroush Abbasi
von Bardeleben, H. J.
Cantin, J. L.
|Keywords:||Photonic Quantum Networks
Nitrogen Vacancy Center
|Issue Date:||2018||Source:||Zargaleh, S. A., Hameau, S., Eble, B., Margaillan, F., von Bardeleben, H. J., Cantin, J. L., & Gao, W. (2018). Nitrogen vacancy center in cubic silicon carbide : a promising qubit in the 1.5μm spectral range for photonic quantum networks. Physical Review B, 98(16), 165203-. doi:10.1103/PhysRevB.98.165203||Series/Report no.:||Physical Review B||Abstract:||We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the 3E→3A2 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.||URI:||https://hdl.handle.net/10356/105497
|DOI:||10.1103/PhysRevB.98.165203||Rights:||© 2018 American Physical Society (APS). All rights reserved. This paper was published in Physical Review B and is made available with permission of American Physical Society (APS).||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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