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|Title:||Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking||Authors:||Peng, L.
Li, H. Y.
Tan, Chuan Seng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Peng, L., Fan, J., Li, H. Y., Gao, S., & Tan, C. S. (2012). Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less cu-cu bonding for 3D wafer stacking. 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1-2.||Abstract:||Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15μm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >;10X lower than the reject limit without under-fill. This provides robust IC-to-IC connection density of 4.4 × 105 cm-2 suitable for future wafer level 3D integration.||URI:||https://hdl.handle.net/10356/105523
|DOI:||10.1109/VLSI-TSA.2012.6210174||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
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