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|Title:||The integration of InGaP LEDs with CMOS on 200 mm silicon wafers||Authors:||Wang, Bing
Lee, Kwang Hong
Made, Riko I.
Sasangka, Wardhana Aji
Nguyen, Viet Cuong
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Yoon, Soon Fatt
Fitzgerald, Eugene A.
|Keywords:||Engineering::Electrical and electronic engineering
|Issue Date:||2017||Source:||Wang, B., Lee, K. H., Wang, C., Wang, Y., Made, R. I., Sasangka, W. A., . . . Michel, J. (2017). The integration of InGaP LEDs with CMOS on 200 mm silicon wafers. Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX, 10107, 101070Y-. doi:10.1117/12.2252030||Series/Report no.:||Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX||metadata.dc.contributor.conference:||SPIE OPTO||Abstract:||The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.||URI:||https://hdl.handle.net/10356/105701
|DOI:||10.1117/12.2252030||Schools:||School of Electrical and Electronic Engineering||Rights:||© 2017 SPIE. All rights reserved. This paper was published in Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX and is made available with permission of SPIE.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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