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Title: Direct writing of single germanium vacancy center arrays in diamond
Authors: Zhou, Yu
Mu, Zhao
Adamo, Giorgio
Bauerdick, Sven
Rudzinski, Axel
Aharonovich, Igor
Gao, Wei-bo
Keywords: Conversion Yield
Germanium Vacancy Center
Issue Date: 2018
Source: Zhou, Y., Mu, Z., Adamo, G., Bauerdick, S., Rudzinski, A., Aharonovich, I., & Gao, W. (2018). Direct writing of single germanium vacancy center arrays in diamond. New Journal of Physics, 20(12), 125004-. doi:10.1088/1367-2630/aaf2ac
Series/Report no.: New Journal of Physics
Abstract: Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.
DOI: 10.1088/1367-2630/aaf2ac
Rights: © 2018 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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