Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105775
Title: High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
Authors: Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
Keywords: DRNTU::Engineering::Materials
Issue Date: 2011
Source: Jiang, H., Zhao, H., Zhang, K. K., Chen, X., Kloc, C., & Hu, W. (2011). High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices. Advanced Materials, 23(43), 5075-5080.
Series/Report no.: Advanced materials
Abstract: Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.
URI: https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
ISSN: 0935-9648
DOI: 10.1002/adma.201102975
Rights: © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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