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Title: Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film
Authors: Yang, Yurong
Chen, Zuhuang
Chen, Weigang
Ren, Wei
You, Lu
Qi, Yajun
Zou, Xi
Wang, Junling
Sritharan, Thirumany
Yang, Ping
Bellaiche, L.
Chen, Lang
Keywords: DRNTU::Engineering::Materials
Issue Date: 2011
Source: Chen, W., Ren, W., You, L., Yang, Y., Chen, Z., Qi, Y., et al. (2011). Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film. Applied Physics Letters, 99(22), 222904-.
Series/Report no.: Applied physics letters
Abstract: We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-planepolarization up to 30 μC/cm2. Piezoresponse force microcopy demonstrates that a 180° in-planepolarization switching accompanied by a 90° domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.
ISSN: 0003-6951
DOI: 10.1063/1.3664394
Rights: © 2011 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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