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Title: Spiral waveguides on germanium-on-silicon nitride platform for mid-IR sensing applications
Authors: Li, Wei
Anantha, P.
Lee, Kwang Hong
Qiu, Hao Dong
Guo, Xin
Goh, Simon Chun Kiat
Zhang, Lin
Wang, Hong
Soref, Richard A.
Tan, Chuan Seng
Keywords: Integrated Optics Materials
Engineering::Electrical and electronic engineering
Integrated Optics Devices
Issue Date: 2018
Source: Li, W., Anantha, P., Lee, K. H., Qiu, H. D., Guo, X., Goh, S. C. K., . . . Tan, C. S. (2018). Spiral waveguides on germanium-on-silicon nitride platform for mid-IR sensing applications. IEEE Photonics Journal, 10(3), 2201107-. doi:10.1109/JPHOT.2018.2829988
Series/Report no.: IEEE Photonics Journal
Abstract: Spiral waveguides on a new germanium-on-silicon nitride (GON) platform with a wide transparency and a large core-clad index contrast for mid-infrared (mid-IR) sensing applications are demonstrated. Spiral waveguide sensors with a low bending loss on this platform enable compact sensors for mid-IR absorption spectroscopy. A minimum volumetric concentration of 5% isopropanol (IPA) in an IPA-acetone mixture is measured. This detection limit is three times lower than the counterpart waveguide, fabricated on the regular germanium-on-silicon platform with similar propagation loss at 3.73 μm wavelength. This silicon-compatible GON sensor is promising for applications such as environmental studies, industrial leak detection, process control, medical breath analysis, and many more.
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2018.2829988
Rights: © 2018 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See for more information.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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