Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106309
Title: Implementation of a low noise amplifier with self-recovery capability
Authors: Liu, Yanchen
Zhang, Caizhi
Chen, Tupei
Kong, Deyu
Guo, Rui
Wang, J. J.
Wu, Yuancong
Hu, S. G.
Rong, L. M.
Yu, Qi
Liu, Yang
Keywords: LNA
HCI
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Liu, Y., Zhang, C., Chen, T., Kong, D., Guo, R., Wang, J. J., . . . Liu, Y. (2019). Implementation of a low noise amplifier with self-recovery capability. IEEE Access, 7, 43076-43083. doi:10.1109/ACCESS.2019.2907524
Series/Report no.: IEEE Access
Abstract: In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated.
URI: https://hdl.handle.net/10356/106309
http://hdl.handle.net/10220/48956
DOI: 10.1109/ACCESS.2019.2907524
Rights: © 2019 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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