Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106413
Title: High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode
Authors: Tong, Jinchao
Tobing, Landobasa Y.M.
Ni, Peinan
Zhang, Dao Hua
Keywords: Middle Wavelength Infrared
InAsSb Based Photodiode
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Tong, J., Tobing, L. Y. M., Ni, P., & Zhang, D. H. (2018). High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode. Applied Surface Science, 427, 605-608. doi:10.1016/j.apsusc.2017.08.17
Series/Report no.: Applied Surface Science
Abstract: We present the effect of interface quality on the performance of InAsSb based hetero n-i-p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of ~1.5×109 cmHz1/2W-1 can be achieved at room temperature, and it can be increased to ~4.0×109 cmHz1/2W-1 at 250 K.
URI: https://hdl.handle.net/10356/106413
http://hdl.handle.net/10220/47910
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2017.08.177
Rights: © 2017 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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