Please use this identifier to cite or link to this item:
Title: Design optimization for an SOI MOEMS accelerometer
Authors: Teo, Adrian J. T.
Li, Holden King-Ho
Tan, Say Hwa
Yoon, Yong-Jin
Keywords: Design Optimization
DRNTU::Engineering::Mechanical engineering
Issue Date: 2017
Source: Teo, A. J. T., Li, H. K.-H., Tan, S. H., & Yoon, Y.-J. (2018). Design optimization for an SOI MOEMS accelerometer. Microsystem Technologies, 24(1), 465-472. doi:10.1007/s00542-017-3370-4
Series/Report no.: Microsystem Technologies
Abstract: With optimization being vital, the design optimization of a silicon-on-insulator (SOI) micro-opto-electro-mechanical systems accelerometer is discussed in this paper. This process has enabled a simplistic design that employs double-sided deep reactive ion etching (DRIE) on SOI wafer to be able to attain high sensitivity of 294 µW/G with a calculated proof mass displacement of 0.066 µm/G which was close to ANSYS simulated results of 0.061 µm/G. Optimization has also enabled an in-depth study of the effects of the different variables on the overall performance of the device.
ISSN: 0946-7076
DOI: 10.1007/s00542-017-3370-4
Rights: © 2017 Springer-Verlag Berlin Heidelberg. All rights reserved. This paper was published in Microsystem Technologies and is made available with permission of Springer-Verlag Berlin Heidelberg.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Journal Articles

Files in This Item:
File Description SizeFormat 
Design optimization for an SOI MOEMS accelerometer.pdf1.55 MBAdobe PDFThumbnail

Citations 50

Updated on Mar 17, 2023

Web of ScienceTM
Citations 50

Updated on Mar 25, 2023

Page view(s)

Updated on Mar 26, 2023

Download(s) 50

Updated on Mar 26, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.