Please use this identifier to cite or link to this item:
|Title:||A time-delay-integration CMOS image sensor with pipelined charge transfer architecture||Authors:||Yu, Hang
|Keywords:||DRNTU::Engineering::Mechanical engineering::Machine design and construction||Issue Date:||2012||Source:||Yu, H., Qian, X., Chen, S., & Low, K. S. (2012). A Time-Delay-Integration CMOS image sensor with pipelined charge transfer architecture. 2012 IEEE International Symposium on Circuits and Systems, pp.1624-1627.||Abstract:||In this paper, we report a novel Time-Delay-Integration (TDI) CMOS image sensor for low-earth orbit (LEO) nano-satellite imaging application, where limited exposure time and unexpected flight fluctuations are major design challenges. The sensor features programmable integration time per stage, dynamic charge transfer path and tunable well capacity. A prototype chip of 1536×8 pixels was implemented using TSMC 0.18µm CMOS image sensor process. Photodiode and other transistors are floor-planned in different arrays, providing small pixel pitch of 3.25µm and high fill factor of 57%.||URI:||https://hdl.handle.net/10356/106522
|DOI:||10.1109/ISCAS.2012.6271566||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Conference Papers|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.