Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106611
Title: The effect of annealing temperature on the optical properties of In2S3 thin film
Authors: Mathews, Nripan
Mhaisalkar, Subodh Gautam
Boxi, Xu
Kumar, Mulmudi Hemant
Prabhakar, Rajiv Ramanujam
Keywords: DRNTU::Engineering::Materials
Issue Date: 2012
Source: Boxi, X., Kumar, M. H., Prabhakar, R. R., Mathews, N., & Mhaisalkar, S. G. (2012). The effect of annealing temperature on the optical properties of In2S3 thin film. Nanoscience and nanotechnology letters, 4(7), 747-749(3).
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.
URI: https://hdl.handle.net/10356/106611
http://hdl.handle.net/10220/13646
DOI: 10.1166/nnl.2012.1386
Fulltext Permission: none
Fulltext Availability: No Fulltext
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