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dc.contributor.authorMathews, Nripanen
dc.contributor.authorMhaisalkar, Subodh Gautamen
dc.contributor.authorBoxi, Xuen
dc.contributor.authorKumar, Mulmudi Hemanten
dc.contributor.authorPrabhakar, Rajiv Ramanujamen
dc.identifier.citationBoxi, X., Kumar, M. H., Prabhakar, R. R., Mathews, N., & Mhaisalkar, S. G. (2012). The effect of annealing temperature on the optical properties of In2S3 thin film. Nanoscience and nanotechnology letters, 4(7), 747-749(3).en
dc.description.abstractIndium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.en
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen
dc.titleThe effect of annealing temperature on the optical properties of In2S3 thin filmen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchEnergy Research Institute @ NTU (ERI@N)en
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