Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106646
Title: Temperature dependence of the electrical transport properties in few-layer graphene interconnects
Authors: Lew, Wen Siang
Wang, Qi Jie
Liu, Yanping
Liu, Zongwen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric power
Issue Date: 2013
Source: Liu, Y., Liu, Z., Lew, W. S., & Wang, Q. J. (2013). Temperature dependence of the electrical transport properties in few-layer graphene interconnects. Nanoscale research letters, 8(335).
Series/Report no.: Nanoscale research letters
Abstract: We report a systematic investigation of the temperature dependence of electrical resistance behaviours in tri- and four-layer graphene interconnects. Nonlinear current–voltage characteristics were observed at different temperatures, which are attributed to the heating effect. With the resistance curve derivative analysis method, our experimental results suggest that Coulomb interactions play an essential role in our devices. The room temperature measurements further indicate that the graphene layers exhibit the characteristics of semiconductors mainly due to the Coulomb scattering effects. By combining the Coulomb and short-range scattering theory, we derive an analytical model to explain the temperature dependence of the resistance, which agrees well with the experimental results.
URI: https://hdl.handle.net/10356/106646
http://hdl.handle.net/10220/24994
ISSN: 1556-276X
DOI: 10.1186/1556-276X-8-335
Rights: © 2013 Liu et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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