Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106794
Title: A novel ultra-low power two-terminal zener voltage reference
Authors: Kok, Chiang-Liang
Lim, Wei Meng
Siek, Liter
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Kok, C.-L., Siek, L., & Lim, W. M. (2012). A novel ultra-low power two-terminal zener voltage reference. Journal of circuits, systems and computers, 21(06), 1240017-.
Series/Report no.: Journal of circuits, systems and computers
Abstract: A novel ultra-low power two terminal zener voltage reference is designed and implemented. It realizes the concept of using sub-threshold region of the MOSFET to achieve a very low and stable output voltage within a two terminal circuit topology. This proposed voltage reference was fabricated with Global Foundries 0.18-μm CMOS process, consuming only a very small die area of 0.0009 mm2. Experimental results, carried out on five different silicon samples, explicitly show that it can yield a stable output voltage of 0.22 V at room temperature. It achieves an average temperature coefficient of 6.4 ppm/°C across a wide temperature range from 0°C to 150°C with a standard deviation of 2 ppm/°C. Furthermore, it achieves an ultra-low power consumption of 2 μW. The load regulation is 20 mV/V. This simple and innovative two terminal device can be used to provide a very low and constant voltage difference between any two nodes in an analog circuit.
URI: https://hdl.handle.net/10356/106794
http://hdl.handle.net/10220/17666
DOI: 10.1142/S0218126612400178
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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