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|Title:||Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte||Authors:||Jiang, Jie
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits||Issue Date:||2013||Source:||Jiang, J., Wan, Q., & Zhang, Q. (2013). Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte. IEEE Transactions on Electron Devices, 60(6), 1951-1957.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (~5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (~10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5×107), and a smaller bias-stressing threshold voltage shift (ΔVth=0.13 V) . A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design.||URI:||https://hdl.handle.net/10356/106825
|ISSN:||0018-9383||DOI:||10.1109/TED.2013.2258922||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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