Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106886
Title: Defect-band mediated ferromagnetism in Gd-doped ZnO thin films
Authors: Venkatesh, S.
Franklin, J. B.
Ryan, M. P.
Lee, J.-S.
Ohldag, Hendrik
McLachlan, M. A.
Alford, N. M.
Roqan, I. S.
Keywords: DRNTU::Science::Physics
Issue Date: 2015
Source: Venkatesh, S., Franklin, J. B., Ryan, M. P., Lee, J.-S., Ohldag, H., McLachlan, M. A., et al. (2015). Defect-band mediated ferromagnetism in Gd-doped ZnO thin films. Journal of applied physics, 117(1), 013913-.
Series/Report no.: Journal of applied physics
Abstract: Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (<Gd 0.112 at. %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott's theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.
URI: https://hdl.handle.net/10356/106886
http://hdl.handle.net/10220/25222
ISSN: 0021-8979
DOI: 10.1063/1.4905585
Rights: © 2015 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4905585].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles
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