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Title: Robust doublet STDP in a floating-gate synapse
Authors: Gopalakrishnan, Roshan
Basu, Arindam
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
Issue Date: 2014
Source: Gopalakrishnan, R., & Basu, A. (2014). Robust doublet STDP in a floating-gate synapse. 2014 International Joint Conference on Neural Networks (IJCNN), 4296-4301.
Abstract: Learning in a neural network typically happens with the modification or plasticity of synaptic weight. Thus the plasticity rule which modifies the synaptic strength based on the timing difference between the pre- and post-synaptic spike occurrence is termed as Spike Time Dependent Plasticity (STDP). This paper describes the neuromorphic VLSI implementation of a synapse utilizing a single floating-gate (FG) transistor that can be used to store a weight in a nonvolatile manner and demonstrate biological learning rules such as Long-Term Potentiation (LTP), Long-Term Depression (LTD) and STDP. The experimental STDP plot of a FG synapse (change in weight against Δt tpost tpre) from previous studies shows a depression instead of potentiation at some range of positive values of Δt for a wide set of parameters. In this paper, we present a simple solution based on changing control gate waveforms of the FG device that makes the weight change conform closely with biological observations over a wide range of parameters. We show results from a theoretical model to illustrate the effects of the modified waveform. The experimental results from a FG synapse fabricated in AMS 0.35μm CMOS process design are also presented to justify the claim.
DOI: 10.1109/IJCNN.2014.6889631
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [Article DOI:].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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