Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106983
Title: Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
Authors: Lee, Kwang Hong
Bao, Shuyu
Chong, Gang Yih
Tan, Yew Heng
Fitzgerald, Eugene A.
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2015
Source: Lee, K. H., Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., & Tan, C. S. (2015). Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL materials, 3(1), 016102-.
Series/Report no.: APL Materials
Abstract: A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.
URI: https://hdl.handle.net/10356/106983
http://hdl.handle.net/10220/25276
ISSN: 2166-532X
DOI: 10.1063/1.4905487
Rights: © 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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