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|Title:||Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient||Authors:||Lee, Kwang Hong
Chong, Gang Yih
Tan, Yew Heng
Fitzgerald, Eugene A.
Tan, Chuan Seng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2015||Source:||Lee, K. H., Bao, S., Chong, G. Y., Tan, Y. H., Fitzgerald, E. A., & Tan, C. S. (2015). Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL materials, 3(1), 016102-.||Series/Report no.:||APL Materials||Abstract:||A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 106 cm−2.||URI:||https://hdl.handle.net/10356/106983
|ISSN:||2166-532X||DOI:||10.1063/1.4905487||Rights:||© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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