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Title: A hole modulator for InGaN/GaN light-emitting diodes
Authors: Zhang, Zi-Hui
Kyaw, Zabu
Liu, Wei
Ji, Yun
Wang, Liancheng
Tan, Swee Tiam
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: DRNTU::Science::Physics::Optics and light
Issue Date: 2015
Source: Zhang, Z.-H., Kyaw, Z., Liu, W., Ji, Y., Wang, L., Tan, S. T., et al. (2015). A hole modulator for InGaN/GaN light-emitting diodes. Applied physics letters, 106(6), 063501-.
Series/Report no.: Applied physics letters
Abstract: The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.
ISSN: 0003-6951
DOI: 10.1063/1.4908118
Rights: © 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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