Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106993
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dc.contributor.authorZhang, Zi-Huien
dc.contributor.authorKyaw, Zabuen
dc.contributor.authorLiu, Weien
dc.contributor.authorJi, Yunen
dc.contributor.authorWang, Lianchengen
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorSun, Xiao Weien
dc.contributor.authorDemir, Hilmi Volkanen
dc.date.accessioned2015-03-27T07:21:38Zen
dc.date.accessioned2019-12-06T22:22:39Z-
dc.date.available2015-03-27T07:21:38Zen
dc.date.available2019-12-06T22:22:39Z-
dc.date.copyright2015en
dc.date.issued2015en
dc.identifier.citationZhang, Z.-H., Kyaw, Z., Liu, W., Ji, Y., Wang, L., Tan, S. T., et al. (2015). A hole modulator for InGaN/GaN light-emitting diodes. Applied physics letters, 106(6), 063501-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/106993-
dc.description.abstractThe low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.format.extent6 p.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4908118].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Science::Physics::Optics and lighten
dc.titleA hole modulator for InGaN/GaN light-emitting diodesen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1063/1.4908118en
dc.description.versionPublished versionen
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