Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107198
Title: Growth of reduced graphene oxide
Authors: Huang, Jingfeng
Chen, Hu
Fam, Derrick
Faulkner, Steve H.
Niu, Wenbin
Larisika, Melanie
Nowak, Christoph
Nimmo, Myra A.
Tok, Alfred Iing Yoong
Keywords: DRNTU::Science::Chemistry::Organic chemistry::Oxidation
Issue Date: 2014
Source: Huang, J., Chen, H., Fam, D., Faulkner, S. H., Niu, W., Larisika, M., et al. (2014). Growth of reduced graphene oxide. Materials Research Society Symposium Proceedings, 1702.
Series/Report no.: MRS Proceedings
Abstract: Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scalable production route. However, one of the main limitations that prevent the use of RGO in electronics is the high electrical resistance deviation between fabricated chips. In this article, we present the novel growth of RGO which can bridge the gaps in-between existing flakes and thus reduce the electrical resistance standard deviation from 80.5 % to 16.5 %. The average resistivity of the treated RGO of ∼ 3.8 nm thickness was 200 Ω/square. The study uses an atmospheric-pressure chemical vapour deposition (CVD) system with hydrogen and argon gas bubbling through ethanol before entering the furnace. With a treatment of 2 hours, 100 % of the silicon dioxide substrate was covered with RGO from an initial 65 % coverage. This technology could enable large-scale application of RGO use in practical electronic devices.
URI: https://hdl.handle.net/10356/107198
http://hdl.handle.net/10220/25362
DOI: 10.1557/opl.2014.854
Rights: © 2014 Materials Research Society. This paper was published in Materials Research Society Symposium Proceedings and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1557/opl.2014.854].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Conference Papers

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