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Title: Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione
Authors: Wang, Chengyuan
Zhang, Jing
Long, Guankui
Aratani, Naoki
Yamada, Hiroko
Zhao, Yang
Zhang, Qichun
Keywords: DRNTU::Engineering::Materials::Composite materials
Issue Date: 2015
Source: Wang, C., Zhang, J., Long, G., Aratani, N., Yamada, H., Zhao, Y., et al. (2015). Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione. Angewandte chemie-International edition, 54(21), 6292-6296.
Series/Report no.: Angewandte chemie-International edition
Abstract: Increasing the length of N-heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π-conjugated N-heteroquinone 6,10,17,21-tetra-((triisopropylsilyl)ethynyl)-5,7,9,11,16,18,20,22-octaazanonacene-8,19-dione (OANQ) has been synthesized and characterized. The as-prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air-stable n-type field-effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2 cm2 V−1 s−1 under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility.
ISSN: 1433-7851
DOI: 10.1002/anie.201500972
Rights: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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