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https://hdl.handle.net/10356/107355
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Xiao | en |
dc.contributor.author | Lin, Shisheng | en |
dc.contributor.author | Xu, Yang | en |
dc.contributor.author | Hakro, Ayaz Ali | en |
dc.contributor.author | Hasan, Tawfique | en |
dc.contributor.author | Zhang, Baile | en |
dc.contributor.author | Yu, Bin | en |
dc.contributor.author | Luo, Jikui | en |
dc.contributor.author | Li, Erping | en |
dc.contributor.author | Chen, Hongsheng | en |
dc.date.accessioned | 2013-12-06T07:17:22Z | en |
dc.date.accessioned | 2019-12-06T22:29:14Z | - |
dc.date.available | 2013-12-06T07:17:22Z | en |
dc.date.available | 2019-12-06T22:29:14Z | - |
dc.date.copyright | 2013 | en |
dc.date.issued | 2013 | en |
dc.identifier.citation | Lin, X., Lin, S., Xu, Y., Hakro, A. A., Hasan, T., Zhang, B., et al. (2013). Ab initio study of electronic and optical behavior of two-dimensional silicon carbide. Journal of materials chemistry C, 1(11), 2131-2135. | en |
dc.identifier.uri | https://hdl.handle.net/10356/107355 | - |
dc.description.abstract | Two-dimensional graphene-like silicon carbide (2d-SiC) has emerged as an intriguing new class of layered nanostructure. Using density functional theory, key electronic and optical properties of 2d-SiC nanosheets, in particular, of mono- and bilayer 2d-SiC, are investigated. The properties of these nanosheets are found to be highly dependent on their physical thickness and geometric configuration. Multilayer 2d-SiC exhibits an indirect bandgap. We find that monolayer 2d-SiC, on the other hand, has a direct bandgap ([similar]2.5 eV) that can be tuned through in-plane strain. We also show that the optical conductivity of multilayer 2d-SiC is sensitive to the interlayer spacing. The results suggest that unlike graphene, silicene and even multilayer 2d-SiC, monolayer 2d-SiC could be a good candidate for optoelectronic devices such as light-emitting diodes. | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Journal of materials chemistry C | en |
dc.subject | DRNTU::Engineering::Materials::Photonics and optoelectronics materials | en |
dc.title | Ab initio study of electronic and optical behavior of two-dimensional silicon carbide | en |
dc.type | Journal Article | en |
dc.contributor.school | School of Physical and Mathematical Sciences | en |
dc.identifier.doi | 10.1039/c3tc00629h | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | SPMS Journal Articles |
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