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Title: Van der Waals negative capacitance transistors
Authors: Wang, Xiaowei
Yu, Peng
Lei, Zhendong
Zhu, Chao
Cao, Xun
Liu, Fucai
You, Lu
Zeng, Qingsheng
Deng, Ya
Zhu, Chao
Zhou, Jiadong
Fu, Qundong
Wang, Junling
Huang, Yizhong
Liu, Zheng
Keywords: Electronic Devices
Two-dimensional Materials
Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Wang, X., Yu, P., Lei, Z., Zhu, C., Cao, X., Liu, F., . . . Liu, Z. (2019). Van der Waals negative capacitance transistors. Nature Communications, 10(1), 3037-. doi:10.1038/s41467-019-10738-4
Series/Report no.: Nature Communications
Abstract: The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec−1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec−1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.
DOI: 10.1038/s41467-019-10738-4
Rights: © 2019 The Author(s). Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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