Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107569
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dc.contributor.authorPou, Josepen
dc.contributor.authorMohamed Sathik, Mohamed Halicken
dc.contributor.authorPrasanth, S.en
dc.contributor.authorSasongko, Firmanen
dc.date.accessioned2019-11-04T02:38:48Zen
dc.date.accessioned2019-12-06T22:34:22Z-
dc.date.available2019-11-04T02:38:48Zen
dc.date.available2019-12-06T22:34:22Z-
dc.date.issued2018en
dc.identifier.citationMohamed Sathik, M. H., Prasanth, S., Sasongko, F., & Pou, J. (2018). Online condition monitoring of IGBT modules using voltage change rate identification. Microelectronics Reliability, 88-90486-492. doi:10.1016/j.microrel.2018.07.040en
dc.identifier.issn0026-2714en
dc.identifier.urihttps://hdl.handle.net/10356/107569-
dc.identifier.urihttp://hdl.handle.net/10220/50316en
dc.description.abstractAs insulated gate bipolar transistors (IGBTs) have gained an important status in a wide range of applications, reliability, and availability of these units are of paramount importance to meet stringent requirements spelled in aviation and industrial standards. Reliability of a power converter is mainly verbalized by the failure rate of power modules. Hence, monitoring IGBTs degradation is very crucial to give early sign of power-module-related failures in power converters. This paper proposes a new potential precursor parameter for IGBTs based on voltage change rate to detect early failure of power modules. The proposed method pays more attention to power modules with chip solder fatigue and bond-wire lift off as a major failure mechanism. An experimental setup using an accelerated power cycling machine is constructed to trigger degradations and failures on several IGBT modules. The experimental results indicate that voltage change rates of the IGBT modules decrease with ageing over time. It is found that the local damage induced by ageing over time changes the parasitic capacitances of an IGBT that leads to a decrease of the voltage change rate of the device.en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesMicroelectronics Reliabilityen
dc.rights© 2018 Elsevier. All rights reserved. This paper was published in Microelectronics Reliability and is made available with permission of Elsevier.en
dc.subjectInsulated Gate Bipolar Transistorsen
dc.subjectVoltage Change Rateen
dc.subjectEngineering::Electrical and electronic engineeringen
dc.titleOnline condition monitoring of IGBT modules using voltage change rate identificationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationRolls-Royce @ NTU Corporate Laben
dc.identifier.doihttp://dx.doi.org/10.1016/j.microrel.2018.07.040en
dc.description.versionAccepted versionen
item.grantfulltextopen-
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