Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107592
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dc.contributor.authorGao, Yuen
dc.contributor.authorGan, Chee Lipen
dc.contributor.authorThompson, C. V.en
dc.contributor.authorSasangka, W. A.en
dc.date.accessioned2019-11-06T07:05:25Zen
dc.date.accessioned2019-12-06T22:35:10Z-
dc.date.available2019-11-06T07:05:25Zen
dc.date.available2019-12-06T22:35:10Z-
dc.date.issued2018en
dc.identifier.citationSasangka, W. A., Gao, Y., Gan, C. L., & Thompson, C. V. (2018). Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 88-90393-396. doi:10.1016/j.microrel.2018.06.048en
dc.identifier.issn0026-2714en
dc.identifier.urihttps://hdl.handle.net/10356/107592-
dc.description.abstractWe have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕB0 < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesMicroelectronics Reliabilityen
dc.rights© 2018 Elsevier. All rights reserved. This paper was published in Microelectronics Reliability and is made available with permission of Elsevier.en
dc.subjectAlGaN/GaN HEMTsen
dc.subjectLeakage Currenten
dc.subjectEngineering::Materialsen
dc.titleImpact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1016/j.microrel.2018.06.048en
dc.description.versionAccepted versionen
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