Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13150
Title: Performance characterisation and design issues of low voltage BiCMOS digital circuits
Authors: Cheong, Chee Seng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1998
Abstract: This report addresses the work done on the power and speed optimisation of 4 different BiCMOS gate structures using 3 sub-micron technologies; namely 1.5V/0.35um, 2.2V/0.5|im and 3.3V/0.8(im for several fan-in fan-out conditions. The BiCMOS structures studied in this project encompass the Bootstrapped BiCMOS (BS BiCMOS), Bootstrapped Full-Swing BiCMOS (BS-FS BiCMOS), Feedback BiCMOS (FB BiCMOS) and Transient Saturated Full-Swing BiCMOS (TS-FS BiCMOS). The BiCMOS performance was characterised by the performance of power and speed in 2 input NAND/AND and NOR/OR gates. The study also covers performance and characterisation using low quality and high quality BJT fabrication processes.
URI: http://hdl.handle.net/10356/13150
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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