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|Title:||Analytical and experimental characterization of sub-half micron MOS devices||Authors:||Chew, Johnny Kok Wai.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits||Issue Date:||1998||Abstract:||We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current.||URI:||http://hdl.handle.net/10356/13187||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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