Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13187
Title: Analytical and experimental characterization of sub-half micron MOS devices
Authors: Chew, Johnny Kok Wai.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 1998
Abstract: We present in this thesis the characterization of deep submicrometer (the device channel length ranges from 0.25um to l.Oum) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its source-body junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flowing beneath the principal MOS current.
URI: http://hdl.handle.net/10356/13187
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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