Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13234
Title: Reverse short channel effects in nMOSFETs
Authors: Lee, Teck Koon.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1999
Abstract: Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced Diffusion (TED). The Reverse Short Channel Effects is the anomalous increase in the threshold voltage of devices as channel lengths are reduced and the latter is the enhanced diffusion of the implanted dopants following rapid thermal annealing.
URI: http://hdl.handle.net/10356/13234
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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