Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13263
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dc.contributor.authorKam, Adele Hwei Tingen_US
dc.date.accessioned2008-07-08T07:30:29Zen_US
dc.date.accessioned2008-10-20T07:22:11Z
dc.date.available2008-07-08T07:30:29Zen_US
dc.date.available2008-10-20T07:22:11Z
dc.date.copyright1999en_US
dc.date.issued1999en_US
dc.identifier.urihttp://hdl.handle.net/10356/13263
dc.description.abstractThe simulations are performed using the two-dimensional device simulator, MEDICI. To produce an accurate prediction of devices in this material system, the quaternary compounds formed between the GalnP and InGaAs interface needs to be accounted for. A model of these quaternary layers was incorporated into the simulation program for the first time. An analytical model was also incorporated to account for the quantal nature of electron transport in the device channel. The development of the simulation program also includes establishing a suitable device geometry and mesh, determination of bandgap energy and band alignment of materials in the device heterolayers and determination of a consistent set of variables and parameters values for the simulation setup.en_US
dc.format.extent111 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleTwo-dimensional simulation and design of high electron mobility transistorsen_US
dc.typeThesisen_US
dc.contributor.supervisorYoon, Soon Fatten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
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