Please use this identifier to cite or link to this item:
Title: Two-dimensional simulation and design of high electron mobility transistors
Authors: Kam, Adele Hwei Ting
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1999
Abstract: The simulations are performed using the two-dimensional device simulator, MEDICI. To produce an accurate prediction of devices in this material system, the quaternary compounds formed between the GalnP and InGaAs interface needs to be accounted for. A model of these quaternary layers was incorporated into the simulation program for the first time. An analytical model was also incorporated to account for the quantal nature of electron transport in the device channel. The development of the simulation program also includes establishing a suitable device geometry and mesh, determination of bandgap energy and band alignment of materials in the device heterolayers and determination of a consistent set of variables and parameters values for the simulation setup.
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
12.17 MBAdobe PDFView/Open

Page view(s) 50

Updated on Jul 11, 2024


Updated on Jul 11, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.