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Title: Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
Authors: Lee, Teng Mong.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 1998
Abstract: Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dynamic random access memory (DRAM).
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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