Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13321
Title: Study of indium gallium phosphide compound semiconductor grown by solid source molecular beam epitaxy
Authors: Mah, Kia Woon
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1999
Abstract: This thesis presents the molecular beam epitaxial (MBE) growth of In0.48Ga0.52P epilayers on GaAs substrate (001) using the valved phosphorus cracker cell at various growth conditions. Results from crystalline quality, optical, transport and surface morphology characterizations of the material system are included.
URI: http://hdl.handle.net/10356/13321
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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