Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13355
Title: Design of high performance quarter-micron retrograde well P-channel MOSFET
Authors: Swe, Toe Naing.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 1999
Abstract: This thesis presents the design and optimization through fabrication and simulation of quarter-micron surface-channel pMOSFETs for low power, high speed applications. The high performance pMOSFET is realized by careful design of the channel, well and source/drain doping profile. The main features of the fabricated devices are non-uniform channel doping, high energy deep retrograde well, p+-polysilicon gate approach and the LDD source-drain structure.
URI: http://hdl.handle.net/10356/13355
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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