Please use this identifier to cite or link to this item:
|Title:||Sol gel dielectrics for organic field effect transistors : investigations of device performance enhancement, molecular organization and interfacial chemistry effects||Authors:||Cahyadi, Tommy||Keywords:||DRNTU::Engineering::Materials::Organic/Polymer electronics||Issue Date:||2008||Source:||Cahyadi, T. (2008). Sol gel dielectrics for organic field effect transistors : investigations of device performance enhancement, molecular organization and interfacial chemistry effects. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This thesis reports on the concept of introducing sol-gel silica as solution-processable inorganic gate dielectric with improved OFETs performance. The smoother film surfaces of sol-gel silica (~1.9 Å root-mean-square) and low surface energy (water contact angle of ~75°) have been shown to allow effective modification of bottom layer topography without being limited by the chemistry required for self-assembled monolayer (SAM) functionalization, while simultaneously fine-tuning the dielectric surface, thus resulting in planarization of dielectric surface roughness in stacked gate dielectric applications.||URI:||https://hdl.handle.net/10356/13542||DOI:||10.32657/10356/13542||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.