Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/13542
Title: Sol gel dielectrics for organic field effect transistors : investigations of device performance enhancement, molecular organization and interfacial chemistry effects
Authors: Cahyadi, Tommy
Keywords: DRNTU::Engineering::Materials::Organic/Polymer electronics
Issue Date: 2008
Source: Cahyadi, T. (2008). Sol gel dielectrics for organic field effect transistors : investigations of device performance enhancement, molecular organization and interfacial chemistry effects. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This thesis reports on the concept of introducing sol-gel silica as solution-processable inorganic gate dielectric with improved OFETs performance. The smoother film surfaces of sol-gel silica (~1.9 Å root-mean-square) and low surface energy (water contact angle of ~75°) have been shown to allow effective modification of bottom layer topography without being limited by the chemistry required for self-assembled monolayer (SAM) functionalization, while simultaneously fine-tuning the dielectric surface, thus resulting in planarization of dielectric surface roughness in stacked gate dielectric applications.
URI: https://hdl.handle.net/10356/13542
DOI: 10.32657/10356/13542
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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