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Title: Strained germanium nanowire optoelectronic devices for photonic-integrated circuits
Authors: Qi, Zhipeng
Sun, Hao
Luo, Manlin
Jung, Yongduck
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Qi, Z., Sun, H., Luo, M., Jung, Y., & Nam, D. (2018). Strained germanium nanowire optoelectronic devices for photonic-integrated circuits. Journal of Physics: Condensed Matter, 30(33), 334004-. doi:10.1088/1361-648x/aad0c0
Project: RG179/17
Journal: Journal of Physics: Condensed Matter
Abstract: Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineering by elastic strain have opened up the possibility of achieving direct bandgap in germanium, paving the way towards the realization of various high-performance optical devices integrated on a silicon platform. In particular, the latest demonstration of a low-threshold optically pumped laser in a highly strained germanium nanowire is expected to vitalize the field of silicon photonics further. Here, we review recent advances and challenges in strained germanium nanowires for optoelectronic applications such as photodetectors and lasers. We firstly introduce the theoretical foundation behind strained germanium nanowire optoelectronics. And several practical approaches that have been proposed to apply tensile strain in germanium nanowires are further discussed. Then we address the latest progress in the developments of strained germanium nanowire optoelectronic devices. Finally, we discuss the implications of these experimental achievements and the future outlook in this promising research field.
ISSN: 0953-8984
DOI: 10.1088/1361-648X/aad0c0
Schools: School of Electrical and Electronic Engineering 
Rights: © 2018 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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