Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/137170
Title: One-step synthesis of metal/semiconductor heterostructure NbS2/MoS2
Authors: Fu, Qundong
Wang, Xiaowei
Zhou, Jiadong
Xia, Juan
Zeng, Qinsheng
Lv, Danhui
Zhu, Chao
Wang, Xiaolei
Shen, Yue
Li, Xiaomin
Hua, Younan
Liu, Fucai
Shen, Zexiang
Jin, Chuanhong
Liu, Zheng
Keywords: Science::Physics
Issue Date: 2018
Source: Fu, Q., Wang, X., Zhou, J., Xia, J., Zeng, Q., Lv, D., . . . Liu, Z. (2018). One-step synthesis of metal/semiconductor heterostructure NbS2/MoS2. Chemistry of Materials, 30(12), 4001-4007. doi:10.1021/acs.chemmater.7b05117
Journal: Chemistry of Materials
Abstract: Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS 2 /MoS 2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS 2 /MoS 2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS 2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS 2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.
URI: https://hdl.handle.net/10356/137170
ISSN: 0897-4756
DOI: 10.1021/acs.chemmater.7b05117
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.chemmater.7b05117
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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