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Title: Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC
Authors: Meng, Fanyi
Disney, Don
Liu, Bei
Volkan, Yildirim Baris
Zhou, Ao
Liang, Zhipeng
Yi, Xiang
Selvaraj, Susai Lawrence
Peng, Lulu
Ma, Kaixue
Boon, Chirn Chye
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Meng, F., Disney, D., Liu, B., Volkan, Y. B., Zhou, A., Liang, Z., . . . Boon, C. C. (2018). Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC–DC boost converter IC. IEEE Transactions on Power Electronics, 34(3), 1993-1996. doi:10.1109/TPEL.2018.2859419
Journal: IEEE Transactions on Power Electronics
Abstract: This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3-70 V dc-dc boost converter is designed, implemented, and verified experimentally. It features a conversion efficiency of 70.3%, output power of 1.68 W, and compact size of 0.32 × 0.18 cm 2.
ISSN: 0885-8993
DOI: 10.1109/TPEL.2018.2859419
Schools: School of Electrical and Electronic Engineering 
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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