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Title: Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties
Authors: Han, Xu
Feng, Shuanglong
Zhao, Yiming
Li, Lei
Zhan, Zhaoyao
Tao, Zhiyong
Fan, Yaxian
Lu, Wenqiang
Zuo, Wenbin
Fu, Dejun
Keywords: Engineering::Mechanical engineering
Issue Date: 2019
Source: Han, X., Feng, S., Zhao, Y., Li, L., Zhan, Z., Tao, Z., … Fu, D. (2019). Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties. RSC Advances, 9(3), 1394-1402. doi:10.1039/c8ra09307e
Journal: RSC Advances
Abstract: Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C band (200–290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (trise ≈ 0.17 s and tdecay ≈ 0.14 s).
ISSN: 2046-2069
DOI: 10.1039/C8RA09307E
Rights: © 2019 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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