Please use this identifier to cite or link to this item:
|Title:||Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties||Authors:||Han, Xu
|Keywords:||Engineering::Mechanical engineering||Issue Date:||2019||Source:||Han, X., Feng, S., Zhao, Y., Li, L., Zhan, Z., Tao, Z., … Fu, D. (2019). Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties. RSC Advances, 9(3), 1394-1402. doi:10.1039/c8ra09307e||Journal:||RSC Advances||Abstract:||Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C band (200–290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (trise ≈ 0.17 s and tdecay ≈ 0.14 s).||URI:||https://hdl.handle.net/10356/137418||ISSN:||2046-2069||DOI:||10.1039/C8RA09307E||Rights:||© 2019 The Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MAE Journal Articles|
Files in This Item:
|Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties.pdf||4.07 MB||Adobe PDF||View/Open|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.