Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/137591
Title: Hot carriers in halide perovskites : how hot truly?
Authors: Lim, Melvin Jia Wei
Giovanni, David
Righetto, Marcello
Feng, Minjun
Mhaisalkar, Subodh Gautam
Mathews, Nripan
Sum, Tze Chien
Keywords: Science::Physics
Engineering::Materials
Issue Date: 2020
Source: Lim, M. J. W., Giovanni, D., Righetto, M., Feng, M., Mhaisalkar, S. G., Mathews, N., & Sum, T. C. (2020). Hot carriers in halide perovskites : how hot truly?. The Journal of Physical Chemistry Letters, 11(7), 2743-2750. doi:10.1021/acs.jpclett.0c00504
Project: Nanyang Technological University start-up grant M4080514
JSPS-NTU Joint Research Project M4082176
Ministry of Education AcRF Tier 1 grant RG91/19
Ministry of Education AcRF Tier 2 grant MOE2016-T2-1-034
Ministry of Education AcRF Tier 2 grant MOE2017-T2-2-002
Ministry of Education AcRF Tier 2 grant MOE2019-T2-1-097
Singapore National Research Foundation Investigatorship NRF-NRFI-2018-04
Singapore National Research Foundation Competitive Research Programme NRF-CRP14-2014-03
Journal: The Journal of Physical Chemistry Letters
Abstract: Slow hot carrier cooling in halide perovskites holds the key to the development of hot carrier (HC) perovskite solar cells. For accurate modeling and pragmatic design of HC materials and devices, it is essential that HC temperatures are reliably determined. A common approach involves fitting the high-energy tail of the main photobleaching peak in a transient absorption spectrum with a Maxwell-Boltzmann distribution. However, this approach is problematic because of complications from the overlap of several photophysical phenomena and a lack of consensus in the community on the fitting procedures. Herein, we propose a simple approach that circumvents these challenges. Through tracking the broadband spectral evolution and accounting for bandgap renormalization and spectral line width broadening effects, our method extracts not only accurate and consistent carrier temperatures but also other important parameters such as the quasi-Fermi levels, bandgap renormalization constant, etc. Establishing a reliable method for the carrier temperature determination is a step forward in the study of HCs for next-generation perovskite optoelectronics.
URI: https://hdl.handle.net/10356/137591
ISSN: 1948-7185
DOI: 10.1021/acs.jpclett.0c00504
DOI (Related Dataset): https://doi.org/10.21979/N9/MJZNDC
Schools: School of Physical and Mathematical Sciences 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpclett.0c00504
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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