Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/137701
Title: High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers
Authors: Loke, Wan Khai
Wang, Yue
Lee, Kwang Hong
Liu, Zhihong
Xie, Hanlin
Chiah, Siau Ben
Lee, Kenneth Eng Kian
Zhou, Xing
Tan, Chuan Seng
Ng, Geok Ing
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2020
Source: Loke, W. K., Wang, Y., Lee, K. H., Liu, Z., Xie, H., Chiah, S. B., ... Yoon, S. F. (2020). High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers. IEEE Journal of the Electron Devices Society, 8, 122-125. doi:10.1109/JEDS.2020.2967406
Journal: IEEE Journal of the Electron Devices Society
Abstract: N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6\times8 \mu {\text {m}} shows a dc gain of 55 at a collector current of I-{c} = 4 mA, with high collector-emitter breakdown voltage of 17 V. The high-frequency response with cutoff frequency ( f_{T} T) of 23 GHz and maximum available frequency ( f_{\text {max}} T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.
URI: https://hdl.handle.net/10356/137701
ISSN: 2168-6734
DOI: 10.1109/JEDS.2020.2967406
Rights: © 2020 IEEE (Open Access). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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