Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/137841
Title: Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency
Authors: Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ranjan, Kumud
Ng, Geok Ing
Murmu, Peter P.
Kennedy, John
Nitta, Shugo
Honda, Yoshio
Deki, Manato
Amano, Hiroshi
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Sandupatla, A., Arulkumaran, S., Ranjan, K., Ng, G. I., Murmu, P. P., Kennedy, J., . . . Amano, H. (2019). Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency. Sensors, 19(23), 5107-. doi:10.3390/s19235107
Journal: Sensors
Abstract: A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at −20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at −20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from −120 V to −20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at −300 V.
URI: https://hdl.handle.net/10356/137841
ISSN: 1424-8220
DOI: 10.3390/s19235107
Rights: © 2019 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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