Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/137859
Title: High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
Authors: Matsuhisa, Naoji
Jiang, Ying
Liu, Zhiyuan
Chen, Geng
Wan, Changjin
Kim, Yeongin
Kang, Jiheong
Tran, Helen
Wu, Hung-Chin
You, Insang
Bao, Zhenan
Chen, Xiaodong
Keywords: Engineering::Materials
Issue Date: 2019
Source: Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347
Journal: Advanced Electronic Materials
Abstract: High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics.
URI: https://hdl.handle.net/10356/137859
ISSN: 2199-160X
DOI: 10.1002/aelm.201900347
Rights: This is the peer reviewed version of the following article: Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347, which has been published in final form at https://doi.org/10.1002/aelm.201900347. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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