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dc.contributor.authorMatsuhisa, Naojien_US
dc.contributor.authorJiang, Yingen_US
dc.contributor.authorLiu, Zhiyuanen_US
dc.contributor.authorChen, Gengen_US
dc.contributor.authorWan, Changjinen_US
dc.contributor.authorKim, Yeonginen_US
dc.contributor.authorKang, Jiheongen_US
dc.contributor.authorTran, Helenen_US
dc.contributor.authorWu, Hung-Chinen_US
dc.contributor.authorYou, Insangen_US
dc.contributor.authorBao, Zhenanen_US
dc.contributor.authorChen, Xiaodongen_US
dc.identifier.citationMatsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347en_US
dc.description.abstractHigh‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.relation.ispartofAdvanced Electronic Materialsen_US
dc.rightsThis is the peer reviewed version of the following article: Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347, which has been published in final form at This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.en_US
dc.titleHigh-transconductance stretchable transistors achieved by controlled gold microcrack morphologyen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.contributor.organizationInnovative Centre for Flexible Devices (iFLEX)en_US
dc.description.versionAccepted versionen_US
dc.subject.keywordsOrganic Electrochemical Transistorsen_US
dc.subject.keywordsStretchable Conductorsen_US
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